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Measurement of minority-carrier lifetime in silicon at microwave frequencies using microstrip techniques

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2 Author(s)
V. Makios ; Carleton University, Faculty of Engineering, Ottawa, Canada ; R. E. Thomas

A method is described for measuring minority-carrier lifetime in semiconductor samples of any thicknes and dimensions (e.g. silicon is used in device fabrication). The semiconductor sample is used as the dielectric of a microstrip line sandwitched between a ground plane of electroplated gold (or other metal) and electroplateted strip conductor delineated using standard photoresist masking techniques.

Published in:

Electronics Letters  (Volume:7 ,  Issue: 17 )