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High-level asymptotic variation of transistor base resistance and current gain

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3 Author(s)
Roulston, D.J. ; University of Waterloo, Electrical Engineering Department, Waterloo, Canada ; Chamberlain, S.G. ; Sehgal, J.

Using a finite-section model for bipolar transistors with current-dependent base resistance and gain, high-current asymptotic variations of base resistance, gain and effective emitter width are studied, and useful analytic formulas are presented.

Published in:

Electronics Letters  (Volume:7 ,  Issue: 15 )