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Back-illuminated InP/InGaAs heterojunction phototransistors are described. These devices exhibit a low-level optical gain of 40 at 1 nW of incident power which represents a 1000 Ã improvement in sensitivity over previously reported phototransistors. The maximum gain is 1000 at 5 Â¿W input. The response is relatively flat from 0.95 Â¿m to 1.65 Â¿m wavelength.