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Effect of p-doping on carrier lifetime and threshold current density of 1.3 ¿m GaInAsP/InP lasers by liquid-phase epitaxy

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2 Author(s)
Ng, W. ; Rockwell International, Electronics Research Center, Thousand Oaks, USA ; Liu, Y.Z.

A correlation was found between the variation of the threshold current density and carrier lifetime with acceptor concentration in the active layer. An injected electron concentration of 2.5¿3 × 1018/cm3, independent of the acceptor concentration in the active layer, was found at the lasing threshold.

Published in:

Electronics Letters  (Volume:16 ,  Issue: 18 )