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Schottky barrier height of Au on n-type Ga1¿xAlxSb (0.0¿x¿0.65)

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3 Author(s)
Chin, R. ; Rockwell International, Electronics Research Center, Thousand Oaks, USA ; Milano, R.A. ; Law, H.D.

The dependence of the barrier height ¿Bn of Au-Ga1¿xAlxSb Schottky barriers on x, the mole fraction of Al in the solid, has been measured. The data show that as x increases the values of ¿Bn also increase. However, the measured barrier heights do not agree with those predicted by the `common anion¿ rule. This result, coupled with other available data, indicates that the Au-Ga1¿xAlxSb hole Schottky barrier height (¿Bn) is not independent of the Ga/Al cation ratio.

Published in:

Electronics Letters  (Volume:16 ,  Issue: 16 )