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Low threshold current transverse junction lasers on semi-insulating substrates by m.b.e.

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3 Author(s)
Lee, T.P. ; Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA ; Burrus, C.A. ; Cho, A.Y.

Preparation by m.b.e. of GaAs-AlxGa1¿xAs transverse junction lasers on semi-insulating substrates is described. Pulsed current thresholds of 32 mA have been achieved at room temperature (25°C) in initial devices. Single-mode c.w. operation has been achieved with heat-sink temperatures up to 35°C.

Published in:

Electronics Letters  (Volume:16 ,  Issue: 13 )