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Short-channel polysilicon-gate n-channel m.o.s.f.e.t.s have been successfully fabricated using c.w. argon laser annealing of arsenic-implanted source and drain. The turn-on voltage is higher for the laser annealed devices than for those annealed thermally, which were processed identically except for the source and drain annealing. Laser annealing also reduced the n+-layer sheet resistance to about half that of the thermally annealed n+ regions.