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Short-channel polysilicon-gate m.o.s.f.e.t.s fabricated by c.w. argon laser annealing of arsenic-implanted source and drain

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5 Author(s)
Teng, T.C. ; Signetics Corp., Sunnyvale, USA ; Merritt, J.D. ; Velez, J. ; Peng, J.
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Short-channel polysilicon-gate n-channel m.o.s.f.e.t.s have been successfully fabricated using c.w. argon laser annealing of arsenic-implanted source and drain. The turn-on voltage is higher for the laser annealed devices than for those annealed thermally, which were processed identically except for the source and drain annealing. Laser annealing also reduced the n+-layer sheet resistance to about half that of the thermally annealed n+ regions.

Published in:

Electronics Letters  (Volume:16 ,  Issue: 12 )

Date of Publication:

June 5 1980

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