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High performance millimetre Ge-GaAs mixer diode for low l.o. power applications

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5 Author(s)
Christou, A. ; Naval Research Laboratory, Washington, USA ; Anderson, W.T. ; Davey, J.E. ; Bark, M.L.
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Epitaxial Ge/GaAs low-barrier-height Ti-Mo-Au Schottkybarrier diodes exhibit a noise figure of 6.5 dB at 36 GHz and at 0.75 mW of local oscillator (l.o.) power. These diodes represent significant improvement over standard GaAs-Ti diodes at low power levels.

Published in:

Electronics Letters  (Volume:16 ,  Issue: 7 )

Date of Publication:

March 27 1980

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