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Flip-chip mounted GaAs power f.e.t. with improved performance in X- to Ku-band

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6 Author(s)
Mitsui, Y. ; Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan ; Kobiki, M. ; Wataze, M. ; Otsubo, M.
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A GaAs power m.e.s.f.e.t. with a new structure has been developed, which allows extremely reduced source inductances and minimised thermal resistance. In the structure, the chip, with metal posts plated on the source, drain and gate pads, is connected directly to the package with no wire. The best results obtained were 2.5 W at 15 GHz and 4.1 W at 12 GHz.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 15 )