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Effect of Si3N4 encapsulation on the laser-annealing behaviour of GaAs

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4 Author(s)
M. H. Badawi ; University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK ; J. A. Akintunde ; B. J. Sealy ; K. G. Stephens

When semi-insulating GaAs samples are coated with pyrolytically deposited Si3N4 layers and subsequently irradiated with a Q-switched ruby laser with energy densities > 0.3 J/cm2, it is found that a thin layer (0.1¿0.25 ¿m) of the underlying GaAs substrates becomes n-type. This phenomenon may be the reason why, in previous work on laser annealing of donor implanted GaAs samples, the percentage electrical activity increased when samples were coated with Si3N4.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 15 )