By Topic

New semiconductor active device: the conductivity-controlled transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Caruso, A. ; University of Naples, Istituto Electrotecnico, Napoli, Italy ; Spirito, P. ; Vitale, G.

A new semiconductor 3-terminal device has been realised in which a majority-carrier current, flowing in a N+-N-N+ structure, is controlled by a minority-carrier current supplied by a forward-biased P+-N junction. The properties of this device are presented and discussed in terms of a physical model.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 10 )