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V.P.E. GaAs m.e.s.f.e.t. structure using oxygen injection during buffer layer growth

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4 Author(s)
H. Bruch ; Aachen Technical University, Institute of Semiconductor Electronics, SFB 56, Aachen, West Germany ; L. Palm ; F. Ponse ; P. Balk

GaAs m.e.s.f.e.t. structures with high-resistivity buffer layers were prepared by introducing oxygen into the deposition system during growth. The electrical properties of the buffer layers are independent of the oxygen content of the gas phase over a large range of partial pressures. The characteristics of devices prepared with such layers are excellent.

Published in:

Electronics Letters  (Volume:15 ,  Issue: 9 )