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An amplitude modulator for class-E2 EDGE polar transmitters is fabricated in a 0.35mum CMOS process. This hybrid switching modulator consists of a class-D amplifier with a 2MHz switching frequency and a wideband buffered analog amplifier having low output impedance of 200mOmega at high frequency. It can drive an RF PA with an equivalent impedance of 4Omega up to maximum output power of 2.25W with a maximum efficiency of 88.3%. The chip area is 4.7mm2.