Cart (Loading....) | Create Account
Close category search window
 

Two 10Gb/s/pin Low-Power Interconnect Methods for 3D ICs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Qun Gu ; California Univ., Los Angeles, CA ; Xu, Z. ; Jenwei Ko ; Chang, M.-C.F.

Two RF techniques are combined with capacitive coupling interconnect to form ultra-wide-bandwidth impulse interconnect and RF interconnect in 3D IC technology. They achieve 10Gb/s/pin and 11Gb/s/pin transmission with 2.7mW/pin and 4.35mW/pin power consumption, respectively, using the MIT Lincoln Lab 3D 0.18mum CMOS, an 8times improvement over previous work

Published in:

Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International

Date of Conference:

11-15 Feb. 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.