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Two 10Gb/s/pin Low-Power Interconnect Methods for 3D ICs

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4 Author(s)
Qun Gu ; California Univ., Los Angeles, CA ; Xu, Z. ; Jenwei Ko ; Chang, M.-C.F.

Two RF techniques are combined with capacitive coupling interconnect to form ultra-wide-bandwidth impulse interconnect and RF interconnect in 3D IC technology. They achieve 10Gb/s/pin and 11Gb/s/pin transmission with 2.7mW/pin and 4.35mW/pin power consumption, respectively, using the MIT Lincoln Lab 3D 0.18mum CMOS, an 8times improvement over previous work

Published in:

Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International

Date of Conference:

11-15 Feb. 2007