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A Sub-200mV 6T SRAM in 0.13μm CMOS

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4 Author(s)
Bo Zhai ; Michigan Univ., Ann Arbor, MI ; Blaauw, D. ; Sylvester, D. ; Hanson, S.

A deep-subthreshold 6T SRAM functions from 1.2V to 193mV and is fabricated in an industrial 0.13μm CMOS technology. It provides greater than 2× energy-efficiency improvement over the previously proposed MUX-based subthreshold SRAM designs while using half the area. Adjustable footer and headers are introduced, as well as body-bias techniques to allow low-voltage operation.

Published in:

Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International

Date of Conference:

11-15 Feb. 2007