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Use of current controlled GaAs l.p.e. for optimum doping profiles in l.s.a. diodes

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2 Author(s)
D. J. Lawrence ; Cornell University, School of Electrical Engineering, Ithaca, USA ; L. F. Eastman

Microwave device quality GaAs, grown by the electric current-controlled liquid-phase epitaxy method, is reported. Ratios of peak current to valley current near the theoretical limit for the corresponding layer doping and thickness are reported, along with high breakdown voltages in unloaded l.s.a. oscillators.

Published in:

Electronics Letters  (Volume:14 ,  Issue: 4 )