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Gunn-effect high-speed carry finding device for 8 bit binary adder

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3 Author(s)
Nobuo Hashizume ; Electrotechnical Laboratory, Tokyo, Japan ; Shoei Kataoka ; Kazutaka Tomizawa

A high-speed carry finding device consisting of seven inhibitors, each an integrated Schottky electrode-triggered Gunn device and an m.e.s.f.e.t., was fabricated monolithically. The device could find and store carry signals of all digits in 330 ps at the worst logic case. The anode-voltage margin was 11%

Published in:

Electronics Letters  (Volume:13 ,  Issue: 21 )