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Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm

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4 Author(s)
Dentai, A.G. ; Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA ; Lee, T.P. ; Burrus, C.A. ; Buehler, E.

Double-heterostructure InP/lnGaAsP/lnP high-radiance l.e.d.s have been fabricated by liquid-phase epitaxy on the <IIIB> face of commercially available InP substrates. The best small-area l.e.d.s had a useful external power efficiency of 1.5% and a 900 Å-wide emission spectrum centred at 1.23 μm. emitting ~3 mW into the air at 100 mA and 2 V; essentially similar results were obtained with devices operating al 1.30 μm.

Published in:

Electronics Letters  (Volume:13 ,  Issue: 16 )

Date of Publication:

August 4 1977

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