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Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode

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3 Author(s)
Hashizume, Nobuo ; Electrotechnical Laboratory, Tokyo, Japan ; Kataoka, Shoei ; Tomizawa, Kazutaka

A new Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode is proposed and its operation demonstrated with a monolithically fabricated device. Theoretical calculations show that the device could be modified into a static memory device if the Schottky electrode potential is chosen as the output.

Published in:

Electronics Letters  (Volume:13 ,  Issue: 2 )