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Local-oscillator-induced noise in GaAs Schottky mixer diodes

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2 Author(s)
Mattauch, R.J. ; University of Virginia, Charlottesville, USA ; Fei, F.S.

Increased noise temperature induced by local-oscillator power has been measured in Schottky-diode millimetre-wave mixers at 250 MHz and 4.75 GHz. Electric-field calculations indicate a portion of this noise is due to intervalley scattering in the undepleted epitaxial layer directly adjacent to the Schottky-diode anode. A noise-temperature equation is presented, which accounts for both shot and thermal noise, where the thermal portion includes the intervalley scaltering component.

Published in:

Electronics Letters  (Volume:13 ,  Issue: 1 )