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Novel GaAs metallised diode configurations to reduce skin-effect contributions at high frequencies

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2 Author(s)
Calviello, J.A. ; Cutler-Hammer, Inc., Central Research Group, AIL Division, Deer Park, USA ; Wallace, J.L.

A highly reliable metallised GaAs Ta-Schottky-barrier diode with native-oxide passivation has been developed. The zero bias cutoff frequency of these diodes is greater than 1000 GHz when measured accurately near 60 GHz, with a zero-bias junction capacitance near 0·1 pF. This zero-bias cutoff frequency is approximately twice the value for a comparable nonmetallised device. The letter describes the r.f. properties and the structure of the device.

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Electronics Letters  (Volume:12 ,  Issue: 24 )