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C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands

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3 Author(s)
Ino, M. ; NTT, Electrical Communication Laboratories, Musashino, Japan ; Ishibashi, T. ; Ohmori, M.

Submillimetre-wave silicon single-drift-region IMPATT diodes with a p+¿p¿n+ structure have been fabricated by ion implantation. C.W. output powers of 7.5 mW at 285 GHz and 78 mW at 185 GHz were obtained. The maximum c.w. oscillation frequency observed was 394 GHz.

Published in:

Electronics Letters  (Volume:12 ,  Issue: 6 )