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Multi-Gate MOSFETs with Dual Contact Etch Stop Liner Stressors on Tensile Metal Gate and Strained Silicon on Insulator (sSOI)

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11 Author(s)
Che-Hua Hsu ; United Microelectron. Corp., Hsin-Chu ; Weize Xiong ; Chien-Ting Lin ; Huang, Yao-Tsung
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This paper describes a comprehensive study of the impact of tCESL (tensile Contact Etch Stop Liner) and cCESL (compressive Contact Etch Stop Liner) on tensile metal gate MuGFET with SOI and globally strained SOI (sSOI) substrates. We have demonstrated that tCESL and cCESL can be effectively used on MuGFETs to provide performance gain. Since tCESL and cCESL affect NMOS and PMOS mobilities in the opposite directions, dual stress liner technology with high-stress cCESL is needed for optimal CMOS MuGFET performance.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007

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