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A multi-gate CMOS technology for low-power applications with highly competitive digital performance is presented. Ring oscillators with metal gates and undoped fins are measured with high yield demonstrating the capability of large scale integration. An inverter delay of 15 ps and 0.5 nA/stage off-current at Vdd=1.2 V shows an improved leakage-performance trade-off compared to 65 nm low-standby power CMOS technologies. Scalability to 32 nm and beyond is shown.