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In this work, we investigate the characteristics of a MOSFET with a hybrid solid/liquid gate-dielectric structure, which can be used for fluidic sensor applications. This "WetFET" device is made using a standard MOSFET fabrication process with additional steps to selectively remove portions of the gate dielectric and to subsequently refill the resultant gaps with liquid. Characteristics of the first prototype WetFET device are presented and analyzed with the aid of device simulations. It is concluded that as transistor performance is highly sensitive to the gate dielectric properties, this structure is promising for creating new, efficient sensors.