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Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

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13 Author(s)

Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (Ef) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new described as the "flatband (Vfb,) rolloff effect" is shown to be the dominant factor.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007

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