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BTI Reliability of Dual Metal Gate CMOSFETs with Hf-based High-k Gate Dielectrics

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9 Author(s)
J. C. Liao ; VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC, Tel: 886-6-2080398, Fax: 886-6-2345482, E-mail: ; Y. K. Fang ; Y. T. Hou ; C. L. Hung
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This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO2 and HfSiON. Severer PBTI degradation was observed on HfO2 NMOSFETs and two NBTI degradation behaviors were observed on HfO2 pMOSFET. The strain effect and channel length dependence on BTI were also investigated. Mechanical strain degrades NBTI but has no effect on PBTI. As channel length scaling down, both PBTI and NBTI are mitigated.

Published in:

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Date of Conference:

23-25 April 2007