BTI Reliability of Dual Metal Gate CMOSFETs with Hf-based High-k Gate Dielectrics

This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO
₂
and HfSiON. Severer PBTI degradation was observed on HfO
₂
NMOSFETs and two NBTI degradation behaviors were observed on HfO
₂
pMOSFET. The strain effect and channel length dependence on BTI were also investigated. Mechanical strain degrades NBTI but has no effect on PBTI. As channel length scaling down, both PBTI and NBTI are mitigated.