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BTI Reliability of Dual Metal Gate CMOSFETs with Hf-based High-k Gate Dielectrics

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9 Author(s)
Liao, J.C. ; Nat. Cheng Kung Univ., Tainan ; Fang, Y.K. ; Hou, Y.T. ; Hung, C.L.
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This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO2 and HfSiON. Severer PBTI degradation was observed on HfO2 NMOSFETs and two NBTI degradation behaviors were observed on HfO2 pMOSFET. The strain effect and channel length dependence on BTI were also investigated. Mechanical strain degrades NBTI but has no effect on PBTI. As channel length scaling down, both PBTI and NBTI are mitigated.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007

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