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Metal Inserted Poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration

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14 Author(s)

We demonstrate for the first time the CMOS integration combining inserted metal with FUSI using a novel process flow. The proposed flow allows for a flexible gate electrode and dielectric choice for island PMOSFETS, without adding excessive process complexity or additional masks. It is considered as a promising alternative for dual metal integration for 45 nm bulk CMOS technology and beyond.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007