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Dual-bit SONOS FinFET Non-Volatile Memory Cell and New Method of Charge Detection

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2 Author(s)
Padilla, A. ; Univ. of California at Berkeley, Berkeley ; Tsu-Jae King Liu

A new charge detection method in which the off-state current is used to detect charge stored near to the drain is demonstrated for dual-bit SONOS FinFET NVM cells for the first time. This method is very sensitive to charge stored near to the drain electrode and thus can facilitate gate-length scaling of dual-bit SONOS NVM devices.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007