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A Highly Reliable Multi-level and 2-bit/cell Operation of Wrapped-Select-Gate (WSG) SONOS Memory with Optimized ONO Thickness

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14 Author(s)
Woei-Cherng Wu ; Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd, Hsinchu, Taiwan, Tel: +886-3-5712121 ext 31367 Fax: +886-3-5725230 ; Tien-Sheng Chao ; Wu-Chin Peng ; Wen-Luh Yang
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High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10 us/5 ms) and low programming current (3.5 u/A) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

Published in:

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Date of Conference:

23-25 April 2007