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A Digital Envelope Modulator for an OFDM WLAN Polar Transmitter in 90 nm CMOS

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2 Author(s)
P. T. M. van Zeijl ; Philips Research, NXP Research, High Tech Campus 5, 5656 AE Eindhoven, The Netherlands ; M. Collados

A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90 nm digital CMOS process for the 802.11 a/b/g standards. The digital modulator reaches an output power of -5 dBm for 54 Mbit/s using 64 QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7 mW from a 1.2 V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.

Published in:

2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

Date of Conference:

25-27 April 2007