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GaAs planar Gunn digital devices by sulphur-ion implantation

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2 Author(s)
T. Mizutani ; NTT, Electrical Communication Laboratory, Musashino, Japan ; K. Kurumada

Schottky-barrier-gate Gunn-effect devices have been fabricated in n-type layers produced by sulphur-ion implantation into Cr-doped semi-insulating GaAs substrates. The device performance was examined and a satisfactory gate trigger sensitivity was obtained under d.c. bias conditions.

Published in:

Electronics Letters  (Volume:11 ,  Issue: 25 )