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Acoustic-surface-wave convolver on epitaxial gallium arsenide

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1 Author(s)
Spiermann, A.O.W. ; Technical University of Denmark, Physics Laboratory III, Lyngby, Denmark

A meander-gate field-effect transistor on epitaxial GaAs is used as an acoustic-surface-wave convolver. A bilinear coefficient as high as 2×10¿4 mW¿1 has been measured at 260 MHz. The active area is only 1.8 mm long and the acoustic beam width is 0.7 mm.

Published in:

Electronics Letters  (Volume:11 ,  Issue: 25 )