Referenced Items are not available for this document.
The transient temperature rise of the active portions of short-pulse high-power TRAPATT-diode structures having relatively wide depletion-layer widths separated from the heatsink by appreciable physical lengths is presented.
Published in:
Electronics Letters
(Volume:11
,
Issue:
16
)
Date of Publication: August 7 1975
- Page(s):
- 380 - 381
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19750289
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- August 7 1975
- Sponsored by :
- Institution of Engineering and Technology
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