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Velocity/field characteristic of GaxIn1-xSb calculated by the Monte Carlo method

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4 Author(s)
Salai, K. ; University of Tokyo, Institute of Industrial Science, Tokyo, Japan ; Ikoma, T. ; Adachi, Y. ; Yanai, H.

The velocity/field characteristics of GaxIn1-xSb are calculated by the Monte Carlo method for x = 0.3 to 1.0. The effects of temperature and ionized-impurity scattering are also taken into account. Ga0.5In0.5Sb is shown to be the most suitable, material for low-power dissipation transferred-electron devices.

Published in:

Electronics Letters  (Volume:10 ,  Issue: 19 )