Referenced Items are not available for this document.
Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.
Published in:
Electronics Letters
(Volume:10
,
Issue:
16
)
Date of Publication: August 8 1974
- Page(s):
- 341 - 343
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19740270
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- August 8 1974
- Sponsored by :
- Institution of Engineering and Technology
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