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F.M.-noise measurements on p-type and n-type silicon IMPATT oscillators

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4 Author(s)
G. A. Swartz ; RCA, David Sarnoff Research Center, Princeton, USA ; Y. S. Chiang ; C. P. Wen ; A. Young

F.M.-noise measurements on p-type, step-abrupt n-type and uniformly doped n-type silicon IMPATT-diode oscillators show the correlation between the width of the avalanche zone and f.m. noise. A reduction in the f.m.-noise parameter and an increase in the d.c.-to-r.f.-conversion efficiency have been observed for IMPATT devices with a thinner effective avalanche zone.

Published in:

Electronics Letters  (Volume:9 ,  Issue: 25 )