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Electrically alterable avalanche-injection memory

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2 Author(s)
Card, H.C. ; University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK ; Worrall, A.G.

In a 2-layer (SiO2¿Si3 N4) dielectric structure, avalanche-injected electrons are collected by a floating gate. It is shown that this charge can be removed from the floating gate by conduction through the Si3N4 layer.

Published in:

Electronics Letters  (Volume:9 ,  Issue: 1 )

Date of Publication:

January 11 1973

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