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Optimum r.f.-power transport in nd-limited gallium-arsenide travelling-wave amplifiers

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1 Author(s)
W. Frey ; AEG-Telefunken, Bereich Forschung und Entwicklung, Ulm, West Germany

A theoretical estimate of the power transport of a carrier wave in an nd-limited gallium-arsenide travelling-wave amplifier is presented, The nd being fixed, the thickness d can be optimised. The nd, being chosen to be 2 × 1011 cm-2, yields at 8.2 GHZ and 12 k V /cm bias field an optimum d of 5.3 ¿m, resulting in an r.f. power of 150 mW per centimetre of sample width.

Published in:

Electronics Letters  (Volume:9 ,  Issue: 1 )