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Noise performance of gallium-arsenide and indium-phosphide injection-limited diodes

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1 Author(s)
Kÿllbÿck, B. ; Microwave Institute Foundation, Stockholm, Sweden

Noise factors of gallium-arsenide and indium-phosphide injection-limited diodes have been calculated. The results show that it is generally preferable to bias the diodes to fields higher than the maximum-negative-mobility region if the appropriate boundary condition at the cathode can be maintained.

Published in:

Electronics Letters  (Volume:9 ,  Issue: 1 )