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Mobility parameters and metal-oxidesemiconductor-transistor properties

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3 Author(s)
Martinot, H. ; CNRS, Laboratoire d'Automatique et de ses Applications Spatiales, Toulouse, France ; Rossel, P. ; Vassilieff, G.

A formulation of the effective mobility of the carriers in the channel of m.o.s. transistors, accounting for the effects of the transverse and longitudinal electric field, is presented. The expression of the drain current is consistent with experiment. Correlation relations between mobility parameters have been derived from the variations of these parameters with technology and from their behaviour under stress.

Published in:

Electronics Letters  (Volume:8 ,  Issue: 24 )