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Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves

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1 Author(s)
Bruun, M. ; Technical University of Denmark, Physics Laboratory III, Lyngby, Denmark

A GaAs field-effect-transistor structure has been used as a detector for acoustic surface waves in the frequency range 65¿200 MHz. The conversion loss is shown to be strongly dependent on the source-gate and source-drain voltages. The minimum value obtained is 26 dB for frequencies between 80 and 150 MHz.

Published in:

Electronics Letters  (Volume:8 ,  Issue: 8 )