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Simple integrated circuit with Gunn devices

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1 Author(s)
Mause, K. ; Deutsche Bundespost, Darmstadt, West Germany

This letter describes the structure and electrical performance of a simple integrated digital circuit on GaAs using Gunn devices, which is capable of operating at up to 2 Gbit/s. A directed transfer of domain pulses within the circuit, which is almost free of reactive effects, is achieved by employing Schottky-barrier diodes.

Published in:

Electronics Letters  (Volume:8 ,  Issue: 3 )

Date of Publication:

February 10 1972

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