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P-type hydrogenated microcrystalline silicon (muc-Si:H) thin films (~100 nm) were deposited using plasma enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150degC. RF power density and pressure were varied among films. These films reach a dark conductivity (sigmad) of 10-1 S/cm, activation energy (Ea) of 10-2 eV and crystalline volume fraction (Xc) of > 50 %. The structure of these films is composed of nano-sized crystallites embedded in an amorphous matrix, resulting in wide optical bandgap energies (Eopt). Using the Scherrer's formula, grain sizes were estimated to be < 20 nm.