By Topic

Thermal Characterization of Electrically Injected Thin-Film InGaAsP Microdisk Lasers on Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

We have performed a numerical and experimental analysis of the thermal behavior of electrically injected microdisk lasers that are defined in an InGaAsP-based thin film bonded on top of a silicon wafer. Both the turn-on as well as the pulsed-regime temperature evolution in the lasing region was simulated using the finite-element method. The simulation results are in good agreement with experimental data, which was extracted from the broadening of the time-averaged emission spectra. Lasing at room temperature was only possible in pulsed regime due to the high thermal resistance (10 K/mW). Some strategies to decrease the thermal resistance of the microdisk lasers are proposed and discussed.

Published in:

Lightwave Technology, Journal of  (Volume:25 ,  Issue: 6 )