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An Investigation of Self-Heating Degradation of Metal Induced Laterally Crystallized N-Type Polysilicon Thin Film Transistors

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4 Author(s)
Huaisheng Wang ; Dept. of Microelectron., Soochow Univ., Suzhou ; Mingxiang Wang ; Yang, Z. ; Man Wong

Self-heating degradation of n-type MILC polysilicon TFTs is systematically investigated under different stress powers. Two-stage degradation behaviors with turnaround effect at initial stage are characterized. An anomalous continuous field-effect mobility increase along with its Vg dependence shift is first observed. A consistent model is proposed to understand observed degradation characteristics

Published in:

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Date of Conference:

15-19 April 2007

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