By Topic

Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Kah-Wee Ang ; Dept. of Electr. & Comput. Eng., National Univ. of Singapore ; Chunlei Wan ; King-Jien Chui ; Chih-Hang Tung
more authors

The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si1 -yCy) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable Isub/Id ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current Isub condition which leads to a higher drive current IDsat degradation as compared to the VGS = VGS stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues.

Published in:

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Date of Conference:

15-19 April 2007