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Reliability of a 90nm Embedded Multi-time Programmable Logic NVM Cells Using Work-function Engineered Tunneling Device

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4 Author(s)
Bin Wang ; Impinj Inc., Seattle, WA ; Yanjun Ma ; Horch, A. ; Paulsen, R.

An embedded multi-time programmable (MTP) nonvolatile memory (NVM) has been developed in a standard 90nm logic process. Using a work function engineered tunneling device and 70A tunneling oxide, excellent endurance (>500k cycles) has been achieved. Reliability of the NVM is evaluated against the traditional tunneling device and a model is proposed to explain the observed reliability differences.

Published in:
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Date of Conference: 15-19 April 2007

Page(s):
662 - 663
E-ISBN :
1-4244-0919-5
Print ISBN:
1-4244-0919-5
INSPEC Accession Number:
9573527
Conference Location :
Phoenix, AZ
Digital Object Identifier :
10.1109/RELPHY.2007.370001

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