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An embedded multi-time programmable (MTP) nonvolatile memory (NVM) has been developed in a standard 90nm logic process. Using a work function engineered tunneling device and 70A tunneling oxide, excellent endurance (>500k cycles) has been achieved. Reliability of the NVM is evaluated against the traditional tunneling device and a model is proposed to explain the observed reliability differences.
Date of Conference: 15-19 April 2007