By Topic

Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jen-Pan Wang ; Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Taiwan. Tel: 886-6-2757575 ext 62382; Fax: 886-6-2351864, Email: jpwang@eembox.ee.ncku.edu.tw ; Yan-Kuin Su ; Jone F. Chen

This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.

Published in:

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

Date of Conference:

15-19 April 2007