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Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection

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3 Author(s)
Jen-Pan Wang ; Dept. of Electr. Eng., National Cheng Kung Univ., Tainan ; Su, Yan-Kuin ; Chen, J.F.

This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.

Published in:

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Date of Conference:

15-19 April 2007