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Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection

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3 Author(s)
Jen-Pan Wang ; Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Taiwan. Tel: 886-6-2757575 ext 62382; Fax: 886-6-2351864, Email: ; Yan-Kuin Su ; Jone F. Chen

This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.

Published in:

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

Date of Conference:

15-19 April 2007